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| IPP050N06N G IPB050N06N G OptiMOS(R) Power-Transistor Features * For fast switching converters and sync. rectification * N-channel enhancement - normal level * 175 C operating temperature * Avalanche rated * Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 4.7 100 V m A Type IPP050N06L IPB050N06L Package Marking P-TO220-3-1 050N06L P-TO263-3-2 050N06L Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C1) T C=100 C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 100 100 400 810 6 20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 C2) I D=100 A, R GS=25 I D=100 A, V DS=48 V, di /dt =200 A/s, T j,max=175 C mJ kV/s V W C T C=25 C 300 -55 ... 175 55/175/56 Current is limited by bondwire; with an R thJC=0.5 the chip is able to carry 160A See figure 3 Rev. 1.11 page 1 2006-07-06 IPP050N06N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=270 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A V GS=10 V, I D=100 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 74 60 2.1 3 Values typ. IPB050N06N G Unit max. 0.5 62 40 K/W 4 V Zero gate voltage drain current I DSS - 0.01 1 A - 1 10 4.1 3.8 1.9 148 100 100 5 4.7 S nA m Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) Rev. 1.11 page 2 2006-07-06 IPP050N06N G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) IPB050N06N G Unit max. Values typ. C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=100 A, R G=2.2 V GS=0 V, V DS=30 V, f =1 MHz - 4600 1500 350 21 31 59 30 6100 2000 525 32 47 88 45 pF ns Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=100 A, V GS=0 to 10 V - 24 9.7 51 65 126 5.2 47 32 13 76 95 167 62 nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=100 A, T j=25 C V R=30 V, I F=I S, di F/dt =100 A/s - 0.93 60 130 100 400 1.3 75 160 A V ns nC See figure 16 for gate charge parameter definition Rev. 1.11 page 3 2006-07-06 IPP050N06N G 1 Power dissipation P tot=f(T C); V GS6 V 2 Drain current I D=f(T C); V GS10 V IPB050N06N G 350 120 300 100 250 80 P tot [W] 200 I D [A] 0 50 100 150 200 60 150 40 100 20 50 0 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 limited by on-state resistance 1 s 10 s 0.5 102 DC 100 s 1 ms 10-1 0.2 Z thJC [K/W] 0.1 I D [A] 10 ms 101 0.05 10-2 100 0.02 0.01 single pulse 10-1 10 -1 10-3 10 0 10 1 10 2 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.11 page 4 2006-07-06 IPP050N06N G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 280 10V 7V 6.5 V IPB050N06N G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 15 5V 5.5 V 240 200 10 160 120 5.5 V R DS(on) [m] I D [A] 6.5 V 5 80 5V 10 V 7V 40 0 0 0 0 1 2 3 0 0 40 80 120 160 200 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 240 220 200 180 160 140 120 100 80 60 40 175 C 8 Typ. forward transconductance g fs=f(I D); T j=25 C 240 200 160 g fs [S] 25 C I D [A] 120 80 40 20 0 0 1 2 3 4 0 5 6 7 0 40 80 120 160 200 V GS [V] I D [A] Rev. 1.11 page 5 2006-07-06 IPP050N06N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=100 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 12 5 4.5 10 4 8 3.5 IPB050N06N G 2700 A R DS(on) [m] V GS(th) [V] 3 2.5 2 1.5 1 0.5 270 A 6 98 % typ 4 2 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 105 25 C 98% 175 C 98% 102 175 C 25 C 104 Ciss C [pF] I F [A] Coss 101 103 100 Crss 102 0 10 20 30 40 50 10-1 0 0.5 1 1.5 2 2.5 V DS [V] V SD [V] Rev. 1.11 page 6 2006-07-06 IPP050N06N G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 103 IPB050N06N G 14 Typ. gate charge V GS=f(Q gate); I D=100 A pulsed parameter: V DD 12 30 V 10 12V 48 V 102 25 C 100 C 8 V GS [V] 103 I AV [A] 6 150 C 101 4 2 100 100 101 102 0 0 40 80 120 160 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 75 V GS Qg 70 V BR(DSS) [V] 65 60 V g s(th) 55 Q g (th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q gate 50 T j [C] Rev. 1.11 page 7 2006-07-06 IPP050N06N G IPB050N06N G PG-TO-263 (D-Pak) Rev. 1.11 page 8 2006-07-06 IPP050N06N G PG-TO220-3: Outline IPB050N06N G Rev. 1.11 page 9 2006-07-06 IPP050N06N G IPB050N06N G Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.11 page 10 2006-07-06 |
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